Thermal conductance of metal-diamond interfaces at high pressure.

نویسندگان

  • Gregory T Hohensee
  • R B Wilson
  • David G Cahill
چکیده

The thermal conductance of interfaces between metals and diamond, which has a comparatively high Debye temperature, is often greater than can be accounted for by two-phonon processes. The high pressures achievable in a diamond anvil cell (DAC) can significantly extend the metal phonon density of states to higher frequencies, and can also suppress extrinsic effects by greatly stiffening interface bonding. Here we report time-domain thermoreflectance measurements of metal-diamond interface thermal conductance up to 50 GPa in the DAC for Pb, Au0.95Pd0.05, Pt and Al films deposited on type 1A natural [100] and type 2A synthetic [110] diamond anvils. In all cases, the thermal conductances increase weakly or saturate to similar values at high pressure. Our results suggest that anharmonic conductance at metal-diamond interfaces is controlled by partial transmission processes, where a diamond phonon that inelastically scatters at the interface absorbs or emits a metal phonon.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Interfacial thermal conductance of transfer-printed metal films.

Deterministic assembly of microdevices by transfer-printing is an advanced manufacturing technology that enables the heterogeneous integration of disparate materials on largearea substrates. [ 1–5 ] All active electronic devices generate heat as a byproduct of their operation and thermal management of transfer-printed assemblies must be a consideration whenever the heat fl ux is large. While th...

متن کامل

Qualitative link between work of adhesion and thermal conductance of metal/diamond interfaces

metal/diamond interfaces Christian Monachon,1, a) Georg Schusteritsch,2, b) Efthimios Kaxiras,3 and Ludger Weber1 1)Laboratoire de Métallurgie Mécanique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland 2)School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA 3)Department of Physics and School of Engineering and Applied Sciences, Harvard Universi...

متن کامل

Anharmonic Phonon Interactions at Interfaces and Contributions to Thermal Boundary Conductance

Continued reduction in characteristic dimensions in nanosystems has given rise to increasing importance of material interfaces on the overall system performance. With regard to thermal transport, this increases the need for a better fundamental understanding of the processes affecting interfacial thermal transport, as characterized by the thermal boundary conductance. When thermal boundary cond...

متن کامل

Improved Thermal Interfaces of GaN–Diamond Composite Substrates for HEMT Applications

High-power operation of AlGaN/GaN high-electronmobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates, including the high-thermal-conductivity diamond, are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of thermal resistances at Ga...

متن کامل

Influence of Inelastic Scattering at Metal-Dielectric Interfaces

Thermal boundary conductance is becoming increasingly important in microelectronic device design and thermal management. Although there has been much success in predicting and modeling thermal boundary conductance at low temperatures, the current models applied at temperatures more common in device operation are not adequate due to our current limited understanding of phonon transport channels....

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Nature communications

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2015